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Si雪崩光电探测器

Si雪崩光电探测器

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Si雪崩光电探测器

F-tone Networks提供雪崩光电探测器(APD)比带放大光电探测器(PIN),同样带宽下具有更高的灵敏度和更低的噪声,因此很是适适用于低光功率应用,一般而言,雪崩光电二极管利用内部增益机制提高灵敏度。在二极管上施加高反向偏压爆发强电场。当一个入射光子爆发一个电子空穴对时,电场使电子加速,导致由碰撞电离爆发次级电子。所爆发的电子雪崩将爆发几百倍的增益,用乘法因子M体现,M因子与反向偏压和温度有关。M因子随温度降低而增大,随温度升高而减小。因此我们所有雪崩光电探测器都提供温度赔偿,无需外置温控。目前我们只提供光纤耦合的雪崩光电探测器(APD),这些探测器的荟萃笼罩从可见到近红外(400-1100 nm)的感应规模;请参考下表我们每个光电二极管指标,了解每个探测器简直切探测规模。

P5

 

 

 

 

Important Notice

Performance figures, data and any illustrative material provided in this data sheet are typical and must be specifically confirmed in writing by F-tone Networks before they become applicable to any particular order or contract. In accordance with the F-tone Networks policy of continuous improvement specifications may change without notice.
The publication of information in this data sheet does not imply freedom from patent or other protective rights of F-tone Networks or others. Further details are available from any F-tone Networks sales representative.

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